論文

 

       (1)         “Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions”, Y. Sato, T. Kita, S. Gozu, and S. Yamada: Journal of Applied Physics, 89, 8017~8021 (2001).

       (2)         “Ballistic spin transport in four-terminal NiFe/ In0.75Ga0.25As structure”, Yuuki Sato, Shin-ichiro Gozu, Tomohiro Kita, and Syoji Yamada: Japanese Journal of Applied Physics, 40, L1093~L1096 (2001).

       (3)         “Investigation of Ferromagnetic Microstructures by Local Hall Effect and Magnetic Force Microscopy “, Junsaku Nitta, Thomas Schäpers, Hubert B. Heersche, Takaaki Koga, Yuuki Sato and Hideaki Takayanagi: Japanese Journal of Applied Physics, 41, L2497~L2500 (2002).

       (4)         “Field dependence of electron spin relaxation during transport in GaAs”, Yuuki Sato, Yutaka Takahashi, Yuichi Kawamura and Hitoshi Kawaguchi: Japanese Journal of Applied Physics, 43, L230~L232 (2004).

       (5)         “ Electron Spin relaxations in the electric-field applied GaAs/InGaAs heterostructure”, Y. Sato, Y. Takahashi, Y. Kawamura and H. Kawaguchi: Journal of Superconductivity, 18, 201~205 (2005).

       (6)         “Polarization Bistable Characteristics of Mesa Structure 980 nm Vertical-Cavity Surface-Emitting Lasers”, Yuuki Sato, Takashi Mori, Yasuhiro Yamayoshi and Hitoshi Kawaguchi: Japanese Journal of Applied Physics, 45, L438~L440 (2006).

       (7)         “Optical Buffer Memory Using Porarization-Bistable Vertical-Cavity Surface-Emitting Lasers ”, Hitoshi Kawaguchi, Takashi Mori, Yuuki Sato and Yasuhiro Yamayoshi: Japanese Journal of Applied Physics, 45, L894-L897 (2006).

       (8)         “Electron-electron scattering in the spin polarized transport: A feasibility of observing spin drag”, Yutaka Takahashi, Fumihiko Hirose, Yuuki Sato and Hitoshi Kawaguchi: Journal of Applied Physics, 101, 093707-1-8 (2007). 

       (9)         “ Spin Drag Effect in Temperature Dependence of Spin-Polarized Electron Mobilities”, Yutaka Takahashi, Fumihiko Hirose, Yuuki Sato and Hitoshi Kawaguchi: Japanese Journal of Applied Physics, 46, Part 1 No.4B pp. 2585-2591 (2007).

   (10)         “ Spin-splitting transport in In0.75Ga0.25As/In0.75Al0.25As quantum wire field effect transistor ”, Y. Sato, S. Gozu, T. Kikutani, and S. Yamada: PHYSICA B 272, 114~116 (1999).

   (11)         “ An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions”, Yuuki Sato, Shin-ichiro Gozu, Tomohiro Kita, and Syoji Yamada: PHYSICA E 10, 77~80 (2001).

   (12)         “ Study for realization of spin-polarized field effect transistor”, Yuuki Sato, Shin-ichiro Gozu, Tomohiro Kita, and Syoji Yamada: PHYSICA E, 12, 399~402 (2002).

   (13)         “Possible large zero-field spin-splitting in InxGa1-xAs/InyAl1-yAs (x, y=0.75) heterojunctions”, S. Yamada, Y. Sato, S. Gozu and T. Kikutani: PHYSICA E, 6 (2000) 771~774.

   (14)         “Large and anisotropic zero-field spin-splitting in InxGa1-xAs/InyAl1-yAs (x, y>0.6) heterojunctions”, S. Yamada, Y. Sato, S. Gozu and T. Kikutani: PHYSICA E, 7, 992~996 (2000).

 


学会発表

       (1)         Y. Sato, S. Gozu, T. Kikutani, and S. Yamada, “Spin-splitting transport in In0.75Ga0.25As/In0.75Al0.25As quantum wire field effect transistor,”  The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), MoP-26, Kyoto Research park, Kyoto, Japan. July 19 - 23, 1999.

       (2)         S. Yamada, Y. Sato, S. Gozu and T. Kikutani, “Possible large zero-field spin-splitting in InxGa1-xAs/InyAl1-yAs (x, y=0.75) heterojunctions,”  The 13th International Conference on the Electron Properties of Two-Dimensional Systems (EP2DS-13), Ottawa, Canada, July 1999.

       (3)         S. Yamada, Y. Sato, S. Gozu and T. Kikutani “Large and anisotropic zero-field spin-splitting in InxGa1-xAs/InyAl1-yAs (x, y>0.6) heterojunctions,”  The 9th International Conference on Modulated Semiconductor Structures (MSS-9) Fukuoka, Japan, July, 1999.

       (4)         S. Yamada, Y. Sato, S. Gozu and T. Kikutani, “Gate-Controlled Very Large Spontaneous Spin-Splittings in Normal In0.75Ga0.25As/In0.75Al0.25As Heterojunctions Grown on GaAs Substrates”  The 25th International Conference of Physics in Semiconductor (ICPS-25), Osaka 2000.

       (5)         Y. Sato, S. Gozu, T. Kita, and S. Yamada, “An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions,”  The International Conference on the Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS2000), F7, Sendai International Center, Sendai, Japan. September 13 - 15, 2000.

       (6)         1st International Conference and School on Spintronics & Quantum Information Technology (SPINTECH-1).

       (7)         Outrigger Waillea Resort, Maui, Hawaii, U. S. A. May 13 – 18, 2001.

       (8)         Y. Sato, S. Gozu, T. Kita, and S. Yamada, “ Electrical-spin injection into two-dimensional electron gas at In0.75Ga0.25As/In0.75Al0.25As interface,”  The 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Application (NGS-10). JAIST, Ishikawa, Japan. May 27 - 31, 2001.

       (9)         S. Gozu, T. Kita, H. Sato, Y. Sato, K. Fujii, T. Ohyama, S. Yamada “Residual Strain Dependence of Zero Field Spin Splitting in High Indium Content Metamorphic InGaAs/InAlAs Modulaton Doped Heterostructures,”  The 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Application (NGS-10). JAIST, Ishikawa, Japan. May 27 - 31, 2001.

   (10)         Y. Sato, S. Gozu, T. Kita, and S. Yamada, “ Study for realization of spin-polarized field effect transistor”  The 14th International Conference on the Electron Properties of Two-Dimensional Systems (EP2DS-14), RP11, Hotel Pyramida, Prague, Czech. July 30- August 3, 2001.

   (11)         S. Yamada, T. Kikutani, S. Gozu, Y. Sato, T. Kita “Spontaneous Spin-Splittting Observed in Resonant Tunneling Diode with Narrow Band-Gap Asymmetric Quantum Well,”  The 10th International Conference on Modulated Semiconductor Structures (MSS-10), Linz, Austria, July 1, 2001.

   (12)         Y. Sato, M. Yamaguchi, Y. Takahashi, Y. Kawamura and H. Kawaguchi “Spin relaxation measurement of the spin-polarized electrons during transport in GaAs using double-quantum well heterostructure”  Conference on Lasers and Electro-Optics/Europe 2003 / International Quantum Electronics Conference (CLEO/EQEC2003), EE1-5-WED, International conference center, Munich, Germany. June 22-27 2003.

   (13)         Y. Sato, Y. Takahashi, Y. Kawamura and H. Kawaguchi, “Electron spin relaxation during transport in GaAs”  International conference on Solid State Devices and Materials 2003 (SSDM2003), Late News Paper E-3, Keio Plaza Hotel, Tokyo, Japan. September 16-18 2003.

   (14)         Y. Sato, Y. Takahashi, Y. Kawamura and H. Kawaguchi, “Electron spin relaxations in the electric-field applied GaAs/InGaAs heterostructure”  The 3rd International Conference on the Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS III) Santa Barbara, USA. July 21 - 23, 2004.

   (15)         Y. Sato, T. Mori, Y. Yamayoshi and H. Kawaguchi, “Polarization bistable characteristic of mesa structure 980nm VCSELs”  Conference on Lasers and Electro-Optics/Europe 2005 / International Quantum Electronics Conference (CLEO/EQEC2005), CI2-2-THU(Oral), International conference center, Munich, Germany. June 12-17 2005.

   (16)         T. Mori, Y. Sato, H. Kawaguchi, “2-bit optical buffering using polarization bistable VCSELs”  19th Annual Meeting of the IEEE Lasers and Electro-Optics Society (IEEE/LEOS 2006), WJ2(Oral), Long Beach, USA, October 29-November 2, 2006.

 

   (17)         佐藤祐喜, 菊谷友志, 牛頭信一郎, 山田省二「強磁性体電極InGaAs/InAlAs FETの動作特性」日本物理学会第54回年次会, 29p-ZE-2, 広島大学, 1999, 3, 28.

   (18)         佐藤祐喜, 牛頭信一郎, 池田宗紀, 菊谷友志, 山田省二「高In組成InGaAs/InAlAs2次元電子ガス系のスピン分裂の異方性」日本物理学会1999年秋の分科会, 27pD-3, 岩手大学, 1999, 9, 24.

   (19)         佐藤 祐喜、牛頭 信一郎、北 智洋、山田 省二「高In組成InGaAs/InAlAs2次元電子ガス系のスピン分離におけるヘテロ界面依存性」日本物理学会第55回年次会, 23pSA-1, 新潟大学, 2000, 9, 22.

   (20)         佐藤祐喜、牛頭信一郎、北智洋、山田省二「NiFe-In0.75Ga0.25As/In0.75Al0.25As界面におけるスピン注入」日本物理学会第56回年次会, 27aYS-1, 中央大学多摩キャンパス, 27aYS-1, 2001, 3, 27.

   (21)         佐藤祐喜, 山口雅剛, 高橋豊, 河村裕一, 河口仁司「光励起スピン偏極電子のスピン輸送特性」第50回応用物理学関係連合講演会, 30a-ZH-13, 神奈川大学(横浜キャンパス), 2003, 3, 30.

   (22)         山口雅剛, 清水成, 佐藤祐喜, 山吉康弘, 河口仁司 「メサ構造InGaAs/GaAs面発光半導体レーザの作製と評価」応用物理学会東北支部第58回学術講演会, 5aA12, 岩手大学, 2003, 12, 5.

   (23)         佐藤祐喜, 高橋豊, 河村裕一, 河口仁司「GaAs中を輸送されるスピン偏極電子のスピン緩和の電界依存性」第51回応用物理学関係連合講演会, 30p-ZK-2, 東京工科大学, 2004, 3, 30.

   (24)         清水成, 佐藤祐喜, 森隆, 山吉康弘, 河口仁司「面発光半導体レーザの発振偏光のメサ形状依存性」第65回応用物理学会学術講演会、1a-ZN-34, 東北学院大, 2004, 9, 1

   (25)         森隆, 佐藤祐喜, 山吉康弘, 河口仁司「メサ構造面発光半導体レーザの偏光双安定特性」第52回応用物理学関係連合講演会、1a-ZQ-13、埼玉大学、2005, 4, 1.